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IGBTs will be the key to achieving a 20% reduction in energy consumption in China's 11th Five-Year Plan
View£º4760 Release Date£º2022/9/1 16:18:16

¡¡¡¡China's Eleventh Five-Year Plan has clearly stated that the energy consumption per unit of GDP should be reduced by about 20%compared with the end of the"Tenth Five-Year"period.Since electricity is currently the main industrial energy source in China,the key to achieving this grand ecological goal of the country is to effectively reduce the power consumption of applications that require high current and high voltage in the industrial production process,such as AC motor control,inverter industrial automation applications such as inverters,relays,UPS power supplies,switching power supplies,frequency converters,active filters,EPS power supplies,wind power generation equipment,industrial transmission devices,elevator or auxiliary transmission equipment,power supplies for locomotives and trains,and heating system transmission devices.
¡¡¡¡All these AC control applications require a core power device capable of generating high current and high voltage.The core power devices currently on the market mainly include MOSFET semiconductor field effect transistors,bipolar power transistors and insulated gate bipolar power transistors IGBT.The MOSFET field effect transistor has the characteristics of fast switching speed and voltage control,but its on-state resistance is large,which makes it difficult to meet the requirements of high voltage and high current;although bipolar power transistors can meet the requirements of high withstand voltage and high current,there is no fast The switching speed is a current-controlled device and requires a large power drive.Therefore,both MOSFET semiconductor field effect transistors and bipolar power transistors cannot meet the requirements of small size,high frequency and high efficiency,only the high-speed performance of insulated gate bipolar power transistors IGBT collector MOSFET field effect transistors and the low performance of bipolar power transistors It has the advantages of voltage-type control,large input impedance,low driving power,fast switching speed,high operating frequency,and large safe working area,which makes IGBT devices an ideal power switching device for these high-power industrial automation applications.Therefore,whether the power consumption of IGBT switching elements can be effectively reduced has become one of the keys to achieve the overall energy consumption target of China's Eleventh Five-Year Plan.
¡¡¡¡At the upcoming 2007 Munich Electronics Show in Shanghai,today's leading IGBT device suppliers,such as Mitsubishi Electric,Semikron,Fuji Electric and Infineon Semiconductor,will bring the vast number of Chinese mechanical and electrical product designers.The latest IGBT products they have developed.Mitsubishi Electric Corporation,for example,will bring its fifth-generation high-performance,miniaturized,low-loss intelligent power module(IPM)featuring the following features:the use of the fifth-generation new trench IGBT(Insulated Gate Bipolar Transistor)silicon Chip,the insulation voltage is up to 2500V,its power consumption is 70%lower than the first generation product,the volume is greatly reduced,and the loss is low;7-unit and 6-unit compact packages;EMI is reduced by using a new ASIC to control di/dt;A temperature sensor is set on the silicon chip to make the over-temperature protection more accurate;the rated current of the braking IGBT is increased to 50%of the inverter IGBT;the maximum output current can reach 900A;the switching frequency can be as high as 20KHz.
¡¡¡¡Infineon Technologies will present the new IHM/IHV B-series IGBT power modules optimized for traction drives and the new compact PrimePACKTM IGBT module family.With the new IHM/IHV B series IGBT power modules,users can design high-efficiency power inverters that can work normally in harsh environments and fully meet the requirements of heavy loads and temperature cycles,such as traction drives for electric locomotives and trams.The new module extends the capabilities and specifications of Infineon's previous generation IHM-A module,enabling improved thermal resistance performance,increased duty cycle capability,and increased operating temperature to+150¡ãC.
¡¡¡¡Compared with the traditional inverter of the same size,the power of the inverter based on this new high-power module design can be increased by 50%.At the same time,due to the excellent thermal performance of the IHM/IHV B module,the output current of the inverter designed with it can increase the output current capability by 50%under typical conditions.For example,the rated current of the 3,300V module increases from 1,200A to 1,500A,an increase of up to 25%.The maximum operating temperature of this new module has also increased from the previous+125¡ãC to+150¡ãC.Infineon has also lowered the minimum storage temperature for this module from-40¡ãC previously to-55¡ãC.
¡¡¡¡The IHM/IHV B series modules are fully compatible with the mature IHM-A series products,which allows users to upgrade without changing the product structure.In addition to improved thermal resistance,the new B-series modules can also meet some very demanding applications,such as traction drives for electric locomotives or trams,where durability and reliability are required.The temperature of these traction drives fluctuates considerably during the start and stop phases.To meet the performance demands of traction drive equipment,Infineon has designed the IHM/IHV B with an aluminum silicon carbide(ALSiC)substrate,which,in combination with an aluminum nitride substrate,increases thermal cycling capability by a factor of 10.For other applications with small temperature changes,such as industrial drives,wind power and elevators,Infineon will offer IHM/IHV B modules using copper substrates.The IHM/IHV B series modules are capable of currents up to 3,600 A and voltages up to 3,300 V.In addition,these new modules are RoHS compliant and meet the fire protection requirements of NFF16-101 and 16-102.
¡¡¡¡The new compact PrimePACKTM IGBT module series provides optimized power converter system solutions for various industrial drives,as well as wind power,elevators and other drive equipment,electric locomotive power supplies and heating system drives.In this new PrimePACKTM module based on an innovative packaging concept,the IGBT chips are located closer to the mounting point of the substrate,reducing the thermal resistance between the substrate and the heat sink.Based on these characteristics,compared with traditional modules,the internal stray inductance can be reduced by about 60%.Reducing stray inductance is important to eliminate overvoltage spikes.The unique layout greatly improves thermal distribution,enabling low thermal resistance performance throughout the module system.The maximum operating temperature has been increased from+125¡ãC to+150¡ãC,significantly exceeding previous modules.Infineon has also lowered the minimum storage temperature for this module from-40¡ãC previously to-55¡ãC.This new IGBT module for power converter applications can also increase the rated current by about 20%under the same blocking voltage or module size,or achieve the same power loss in a relatively small volume.
¡¡¡¡At present,Infineon has launched PrimePACKTM modules with two voltage levels of 1,200V and 1,700V.Each module has two sizes:89mm¡Á172mm and 89mm¡Á250mm.
¡¡¡¡However,due to the fact that IGBT devices are prone to cause voltage and current overshoot during high-speed switching,which affects the working efficiency and reliability of the inverter,and because the overcurrent time that IGBT can withstand is only a few microseconds,and SCR Compared with devices such as GTR(tens of microseconds),it is much smaller,so the requirements for overcurrent protection are very high.However,you don't have to worry about it,because you can find all kinds of self-recovery circuit protection solutions you need at Tyco Electronics'booth.Tyco Electronics'Raychem Circuit Protection Department can provide you with overcurrent,All self-recovery circuit protection solutions including overvoltage,overheating and even electrostatic protection provide the necessary guarantees for various safety certifications for various IGBT applications.
¡¡¡¡For example,the 2Pro device family recently launched by Raychem Circuit Protection Department integrates over-current/over-voltage circuit protection technology with resettable and cooperative protection functions.This RoHS compliant 2Pro series device combines PolySwitch PPTC(Polymer Positive Temperature Coefficient Thermistor)overcurrent protection technology with MOV(Metal Oxide Varistor)device,making it an innovative protection device,It is beneficial to suppress the current in an overcurrent accident and clamp the voltage in an overvoltage accident.This way of realizing cooperative circuit protection by a single device reduces the number of components and improves the reliability of the device.
¡¡¡¡Type 2Pro devices can help equipment manufacturers meet the requirements of the UL 60950 standard and enable equipment to operate normally after a specific lightning strike test.It also helps the device meet surge testing requirements under TIA-968-A,IEC 60950 and ITU-T K.20/K.21 standards.This UL 497A listed protection device also helps provide ESD protection.